Product specifications
Type | Transistor Silicon NPN | |
EAN | 5052406520328 | |
Case | TO39 | |
Vbr CBO | 200 | |
Vbr CEO | 200 | |
Max. PD (W) | 700m | |
C(ob) (F) | 6.0p | |
Derate (Amb) (W/?C) | 4.8m | |
hfe | 360 | |
Ic Max. (A) | 100m | |
Icbo Max. @Vcb Max. (A) | 5.0u | |
Polarity | NPN | |
Trans. Freq (Hz) Min. | 20.M | |
@VCE (test) (V) | 10 | |
Oper. Temp (?C) Max. | 175 | |
@Ic (A) | 50m | |
Pinout Equivalence Number | 3-12 | |
Pkg Style | TO-5 | |
Surface Mounted Yes/No | NO | |
Maximum Collector Power Dissipation (Pc) | 0.7 W | |
Maximum Collector-Base Voltage |Vcb| | 200 V | |
Maximum Collector-Emitter Voltage |Vce| | 200 V | |
Maximum Emitter-Base Voltage |Veb| | 4 V | |
Maximum Collector Current |Ic max| | 0.1 A | |
Max. Operating Junction Temperature (Tj) | 175 ?C | |
Collector Capacitance (Cc) | 12 pF | |
Transition Frequency (ft): | 10 MHz | |
Forward Current Transfer Ratio (hFE), MIN | 360 |