Product Specification
| Collector Emitter Voltage | 1200 V |
| Gate Emitter Voltage | +-20 V |
| Collector Current | 400 A |
| Emitter Current | 400 A |
| Maximum Collector Dissipation | 1600 W |
| Junction Temperature | -40 ~ +150 Deg C |
| Isolation Voltage | 2500 V |
| Minimum Order Quantity | 1 |
Product Description
Mitsubishi IGBT MODULE