CM75DUM-12F MITSUBISHI IGBT MODULE

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250.00 د.إ

Transistor Polarity: N Channel
IGBT Configuration: Dual [Half Bridge]
DC Collector Current: 75
Collector Emitter Saturation Voltage Vce(on): 600
Power Dissipation Pd: 290
Collector Emitter Voltage V(br)ceo: 600
Junction Temperature Tj Max: 150
Transistor Case Style: Module
No. of Pins: 7
Operating Temperature Max: 150
IGBT Technology: IGBT 5 [Trench Gate]
Product Range: F Series
SVHC: To Be Advised

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