IRF820 MOSFET

12.00 د.إ20.00 د.إ

Features:-

? Dynamic dV/dt rating

? Repetitive avalanche rated

? Fast switching

? Ease of paralleling

? Simple drive requirements

? Compliant to RoHS directive 2002/95/EC

Detailed Specifications

Number of Channels1 Channel
Transistor PolarityN-Channel
Drain-Source Breakdown Voltage (Vds)500V
Continuous Drain Current (Id)2.5A
Drain-Source Resistance (Rds On)3Ohms
Gate-Source Voltage (Vgs)20V
Gate Charge (Qg)17 nC
Operating Temperature Range-65 – 150?C
Power Dissipation (Pd)50W

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