MJE200 IC

Type Designator: MJE200

Material of Transistor: Si

• Polarity: NPN
• Maximum Collector Power Dissipation (Pc): 12 W
• Maximum Collector-Base Voltage |Vcb|: 40 V
• Maximum Collector-Emitter Voltage |Vce|: 25 V
• Maximum Emitter-Base Voltage |Veb|: 8 V
• Maximum Collector Current |Ic max|: 5 A
• Max. Operating Junction Temperature (Tj): 150 ?C
• Transition Frequency (ft): 65 MHz
• Collector Capacitance (Cc): 80 pF
• Forward Current Transfer Ratio (hFE), MIN: 45
• Noise Figure, dB: –
• Package: TO126

• Mounting Style:	Through Hole
  Package/Case:	TO-225-3
  Transistor Polarity:	NPN
  Configuration:	Single
  Collector- Emitter Voltage VCEO Max:	25 V
  Collector- Base Voltage VCBO:	40 V
  Emitter- Base Voltage VEBO:	8 V
  Collector-Emitter Saturation Voltage:	1.8 V
  Maximum DC Collector Current:	5 A
  Pd – Power Dissipation:	15 W
  Gain Bandwidth Product fT:	65 MHz
  Minimum Operating Temperature:	– 65 C
  Maximum Operating Temperature:	+ 150 C
  Packaging:	Bulk
  Height:	11.04 mm
  Length:	7.74 mm
  Technology:	Si
  Width:	2.66 mm
  Continuous Collector Current:	5 A
  DC Collector/Base Gain hFE Min:	70
  Product Type:	BJTs – Bipolar Transistors
  Subcategory:	Transistors
  Unit Weight:	2 g